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| TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors * High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) * Industrial Use * Complement to TIP140/141/142 1 TO-3P PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP145 : TIP146 : TIP147 Value - 60 - 80 - 100 - 60 - 80 - 100 -5 - 10 - 15 - 0.5 125 150 - 65 ~ 150 Units V V V V V V V A A A W C C 1.Base 2.Collector 3.Emitter Equivalent Circuit C B VCEO VEBO IC ICP IB PC TJ TSTG Collector-Emitter Voltage : TIP145 : TIP146 : TIP147 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature R1 R2 E R1 8k R2 0.12k Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP145 : TIP146 : TIP147 Collector Cut-off Curren : TIP145 : TIP146 : TIP147 ICBO Collector Cut-off Current : TIP145 : TIP146 : TIP147 IEBO hFE VCE(sat) VBE(sat) VBE(on) tD tR tSTG tF Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter ON Voltage Delay Time Rise Time Storage Time Fall Time VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 VBE = - 5V, IC = 0 VCE = - 4V,IC = - 5A VCE = - 4V, IC = - 10A IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA IC = - 10A, IB = - 40mA VCE = - 4V, IC = - 10A VCC = - 30V, IC = - 5A IB1= -20mA, IB2 = 20mA RL = 6 0.15 0.55 2.5 2.5 1000 500 -2 -3 - 3.5 -3 V V V V s s s s Rev. A, February 2000 Test Condition IC = - 30mA, IB = 0 Min. - 60 - 80 - 100 Typ. Max. Units V V V ICEO VCE = - 30V, IB = 0 VCE = - 40V, IB = 0 VCE = - 50V, IB = 0 -2 -2 -2 -1 -1 -1 -2 mA mA mA mA mA mA mA (c)2000 Fairchild Semiconductor International TIP145/146/147 Typical Characteristics -10 -9 100000 VCE = -4V IC[A], COLLECTOR CURRENT -8 -7 -6 -5 IB = -2000A hFE, DC CURRENT GAIN IB = -1800A IB = -1600A IB = -1400A IB = -1200A IB = -1000A IB = -800A 10000 -4 -3 -2 -1 -0 -0 -1 -2 -3 -4 -5 1000 IB = -600A IB = -400A 100 -0.1 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 -1000 IC =-500IB f=0.1MHz -1 VCE(sat) Cob[pF], CAPACITANCE -10 -100 VBE(sat) -100 -0.1 -0.01 -0.1 -10 -1 -1 -10 -100 -1000 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance -100 150 125 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION -10 100 C D 75 -1 50 TIP140 TIP141 TIP142 25 -0.1 -1 -10 -100 -1000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TIP145/146/147 Package Demensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
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